PART |
Description |
Maker |
GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM 300MHz 512K x 36 18MB double late write sigmaRAM SRAM 333MHz 512K x 36 18MB double late write sigmaRAM SRAM 333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
|
Sony, Corp.
|
MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119 Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc. Motorola Mobility Holdings, Inc. MOTOROLA INC
|
MT59L128V36PB-4.5 |
128K X 36 LATE-WRITE SRAM, 2.25 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Cardinal Components, Inc.
|
GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM 18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM 18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
GS8150V18AB-300 GS8150V18AB-300I GS8150V18AB-333 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
|
GSI[GSI Technology]
|
GS815018AB-300 GS815018AB-333 GS815018AB-357 GS815 |
1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM
|
GSI Technology
|
MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R M |
4M Late Write HSTL
|
Motorola, Inc
|
MCM63R836A |
8M Late Write HSTL
|
Motorola, Inc
|
MCM63R736 |
4M Late Write HSTL From old datasheet system
|
Motorola
|
MCM69L819AZP9R MCM69L737A MCM69L737AZP8.5 MCM69L73 |
From old datasheet system 4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc]
|